Whole-Chip Delayering with Broad Ion Beam Etch

The ever-smaller scale and ever-larger surface areas of today’s semiconductors makes it increasingly difficult to delayer chips with commonly used delayering methods. The broad ion beam etch used in Denton’s Infinity FA System can etch extremely large areas quickly and easily, making it ideal for whole-chip delayering, while its precision endpointing enables both automated and operator-assisted processes. 

In this infographic, learn more about how broad ion beam etch:

• Quickly and uniformly delayer a complete integrated circuit, down to a specific layer of interest
• Supports automated, precision endpointing via SIMS
• Requires no hazardous chemicals, avoids dishing and eliminates iterative manual re-inspection during etch

Fill in the form to download the infographic.